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Effects of residual surface nitrogen, remaining after stripping off oxynitrides (N/sub 2/O-grown or NH/sub 3/-nitrided oxides), on the quality of the regrown gate oxides are studied. Residual surface nitrogen is observed to reduce the breakdown field and degrade the TDDB characteristics of the subsequently grown gate oxides. Results show that oxide regrowth in N/sub 2/O, rather than O/sub 2/, can...
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