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In the last two decades Spintronics has been an important driver for Information Technologies with the introduction in 1996 of magneto-resistive field sensors in data storage and in 2006 of magnetic random access memories. Spintronics can also bring alternative solutions for rf components used in Information-Communication Technologies. By virtue of their specific spin polarized transport properties...
Spin currents offer a way to control static and dynamic magnetic properties, and therefore they are crucial for next-generation MRAM devices or spin-torque oscillators.
After a decade of research, large expectations have been anticipated on how the rich physics of spin transfer induced magnetization dynamics could give birth to a new generation of multi-functional microwave spintronic devices [1].
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