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This work demonstrates a novel multi-stacking PNPN channel structure for nanowire junctionless transistor. With the multi-PNPN channel structure, the design of multi-stacking PNPN junctions can promote the p-type channel layer to achieve fully depleted channel, accompanied with the excellent electrical performances on a steep subthreshold swing of 77 mV/dec and a high on/off current ratio of >10...
A novel method of fabricate ultrathin body (UTB) junctionless TFTs (JLTFT) with sub-10nm poly-Si channel has been successfully demonstrated. It is no additional mask for lithography. The cost of fabrication flow can be reduced by a novel method, that demonstrate at this work. UTB JLTFT has low threshold voltage and steep subthreshold slop 160 mV/dec at W/L=0.7um/1um. An ON/OFF current ratio is about...
In this letter, polycrystalline silicon thin-film transistors (TFTs) consisting of lightly doped drain structure and fluorine-ion-implanted spacers were investigated for the passivation effect under the hot carrier stress. The dose and distribution of fluorine are exhibited by secondary ion mass spectrometry analysis. We could use this method to provide enough fluorine atoms to passivate the defects...
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