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We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily...
For the first time, growth of high-quality Ge-rich Ge1-xSix (0 ?? ?? ?? 0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSix and a better thermal stability of the nickel germanide on Ge1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSix/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate...
A complete extraction technique of SiGe HBTs is developed to extract the base and collector current noises and their correlation. Unlike conventional methods, a four-port noise de- embedding technique is used to remove the influence of extrinsic elements. From the extraction results, we found that the base current noise and collector current noise can not be modeled well using 2qIB and 2qlc, respectively...
A method for extracting current noise sources in SiGe HBTs is proposed in this work. The base current noise, collector current noise and their correlation are extracted after removing the noise contribution from the extrinsic elements of devices. We simplify the extraction procedure by simple calculations of the four-port Y-parameters of the extrinsic circuit. The proposed procedure prevents the complicated...
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