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Thin film resistors (TFRs) have been fabricated by an optimized process. Titanium nitride (TiN) was used as the resistor layer and was deposited by metal organic chemical vapor deposition MOCVD) process. H2-N2 plasma was applied after every cycle of TiN deposition to stabilize TiN films. The fabrication effects such as deposition of the isolation layer, and passivation layer as well as formation of...
In this work, we present the high frequency extraction of electrical material properties of silicon substrates. Two methods, including the substrate integrated waveguide (SIW) based method and the planar resonator based method, are used and their consistency will be shown. For the SIW-based method, a line difference algorithm is applied for the calculation of a broadband material property with the...
New challenges have to be mastered with the introduction of Through Silicon Vias (TSVs) as a key element in 3D integration. This includes also the development and validation of various types of assembly and packaging concepts and methods. The investigations discussed here have been conducted on an interposer for sensor and CMOS devices.
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