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We extract the trap density (Nt) profile of the nitride storage layer in 3-D NAND flash memory cells. The adjacent cells which are programmed suppress significantly the lateral diffusion during retention measurement so that we can extract accurate Nt profile. The AC-gm method makes the Nt profiling in an EC-ET range of 1∼1.2 eV possible, and provides a Gaussian Nt profile together with the retention...
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