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In this paper the experimental results on the conduction characteristics of Al implanted 4H-SiC p-i-n diodes are investigated by mean of numerical simulations. An explicit carrier trap effect, due to the deep defects created by the ion implantation process, was considered during the simulations. In order to model the trap activity, the effective defect density was set as a fraction of the chemical...
The forward J-V characteristics of 4H-SiC p-i-n diodes are investigated in a wide range of currents and temperatures by means of an analytical model which describes in detail the role of the various physical parameters, such as bandgap narrowing effect, incomplete doping activation and doping-dependent mobility. In order to analyze the influence of the SiC properties at different injection regimes,...
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