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Manufacturing process control of porous SiOC:H low-k dielectrics is challenging due to their hybrid nature and process damage vulnerability. We discuss advanced optical modeling of various low-k dielectrics that allows one to reflect their material properties and improves accuracy and precision of scatterometry models widely utilized in manufacturing process control. Furthermore, we explore usage...
We discuss utilization of TMU (Total Measurement Uncertainty) analysis based on Mandel Regression for scatterometry model referencing. We demonstrate practical instances where the reference metrology uncertainty seems to exceed that of the scatterometry model which, in turn, forces the TMU analysis into an invalid regime. Knowing that the source of this result is the wrong estimation of the reference...
Manufacturing process control of porous SiOC:H low-k dielectrics is challenging due to their hybrid nature and process damage vulnerability. We discuss advanced optical modeling of various low-k dielectrics that allows one to reflect their material properties and improves accuracy and precision of scatterometry models widely utilized in manufacturing process control. Furthermore, we explore usage...
We discuss utilization of TMU (Total Measurement Uncertainty) analysis based on Mandel Regression for scatterometry model referencing. We demonstrate practical instances where the reference metrology uncertainty seems to exceed that of the scatterometry model which, in turn, forces the TMU analysis into an invalid regime. Knowing that the source of this result is the wrong estimation of the reference...
A set of SiCOH low dielectric constant films (low-k) has been deposited by plasma enhanced chemical vapor deposition using variable flow rates of the porogen (sacrificial phase) and matrix precursors. During the deposition, two different substrate temperatures and radio frequency power settings were applied. Next, the deposited films were cured by the UV assisted annealing (UV-cure) using two industrial...
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