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Surface roughness causes random shifts in the lowest sub-band level around its ideal position. This gives rise to tail states of an otherwise step-like DOS of the 2D electron gas in the channel. These tail states cause a gradual onset of tunneling in a TFET with vertical tunnel paths and degrade the sub-threshold swing. The impact of roughness of the semiconductor/oxide interface on the transfer characteristics...
The paper presents a semi-classical model to take into account the effect of field induced as well as geometric quantization. It uses the transfer matrix method to determine whether the energy of a given tunnel path lies above or below the first sub-band level. The validity of the model is verified by simulating transfer characteristics of a one-dimensional InGaAs/GaAsSb n-channel TFET and comparing...
Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content [1]. This feature can be exploited for highperformance tunnel FET (TFET) application [2], [3]. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a high on-current. In order to reduce...
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