The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The re-oxidation kinetics of BaTiO3 ceramics sintered by Spark Plasma Sintering (SPS) was investigated using in-situ impedance spectroscopy. Thanks to the flexibility of the SPS process, the grain size of the dense ceramics was tuned from 0.5μm to 10μm. The re-oxidation kinetics are found to be very fast regardless of the grain size and a full re-oxidation of the ceramics are achieved after 20h of...
The fast and direct detection of small quantities of biological and chemical species is of key importance for numerous biomedical applications. Extensive research has been conducted on nanoelectronic devices that can perform such detection with high sensitivity using silicon nanowires and nanostructures. However, it was recently demonstrated that Si material suffers a lack of long-term stability in...
We studied the current-voltage characteristics of percolating networks of silicon nanowires (nanonets), operated in transistor mode, with back-gate biasing. These devices featured P-type field-effect characteristics suitable for future use as sensors. It was found that a Lambert W function-based compact model could be used for parameter extraction of electrical parameters such as effective low field...
This paper reports on the first integration of silicon nanonet into long channel field effect transistors using standard optical microelectronic methods. The electrical characteristics of these devices constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.