The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We investigate crystallinity of sputtered MoS2 films formed in various sputtering conditions to enhance the migration. We found that high substrate temperature, high radio frequency (RF) power and long throw were effective for crystallinity improvement of sputtered MoS2 films and in these conditions higher Hall-effect mobility of 12 cm2/V-s and lower carrier density of 1018 cm−3 were achieved.
We investigate low-temperature formation process of sputtered-MoS2 film. The MoS2 film was formed by radio frequency (RF) sputtering. Then the sputtered-MoS2 was annealed in H2S at from 200 to 400°C. We find that the hydrogen sulfur (H2S) annealing compensate for sulfur defects at low temperature significantly, resulting in a lower carrier density of 2–1016 cm−3.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.