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Interconnections in semiconductor devices need to provide a seamless electrical, thermal, and mechanical link to different parts of the circuit. Since the move away from lead-based solders due to toxicity concerns, the search has been on for materials that can provide desirable attributes before, during, and after bonding. While lead-free solders have been extensively used as a replacement, they are...
This paper presents the design and implementation of engineered nanoscale bonding interfaces as an effective strategy to improve manufacturability of Cu-Cu bonding to the level where it can, for the first time, be applied to chip-to-substrate (C2S) assembly. All-Cu interconnections are highly sought after to meet the escalating electrical, thermal, and reliability requirements of a wide range of emerging...
A novel die-attach joining technique based on low-temperature film sintering of nanoporous Cu is demonstrated. Nanoporous Cu films are proposed as a low-cost replacement of nano-sintering pastes with the following benefits: (i) synthesis by electrochemical dealloying, compatible with standard lithography processes; (ii) no organic content to minimize risks of voiding and corrosion; and (iii) controllable...
Direct Cu-Cu bonding has been pursued by the semiconductor industry as the next interconnection node, for its superior power-handling capability, thermal stability and reliability as compared to traditional solders. However, manufacturability of Cu interconnections has so far been severely limited by the relatively high modulus of Cu, requiring costly planarization processes to address non-coplanarities...
High-throughput assembly technologies to form Copper (Cu) interconnections without solders at below 200°C, and pitch below 40µm has been a major challenge in the semiconductor industry. A unique solution has been demonstrated by Georgia Institute of Technology to overcome this grand challenge. This technology utilizes thermocompression bonding to form copper interconnections with process tolerances...
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