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SiC planar VDMOS of three voltages ratings (1.7 kV, 3.3 kV and 4.5 kV) have been fabricated using a Boron diffusion process into the thermal gate oxide for improving the SiO2/SiC interface quality. Experimental results show a remarkable increase of the effective channel mobility which increases the device current capability, especially at room temperatures. At high temperatures, the impact of the...