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The main objective of this paper is to study the effects of variability in the position of the gates in Double-Gate Shottky-barrier MOSFETs by means of the Monte Carlo method. Taking a device with double gate and perfectly aligned contacts as a starting point, simulations were systematically performed to assess the impact of different types of gate misalignment that may appear. A complete picture...
This paper presents a detailed Monte Carlo study of the optimization of the dopant segregation (DS) layer in n-type Schottky barrier (SB)-MOSFET. It is shown that with a careful control of the DS layer parameters, dopant concentration (N$_{\rm {dop}}$ ), and length (L$_{\rm {dop}}$ ), the performance of the devices is significantly enhanced. The presence of the DS layer induces crucial effects in...
This paper is focused on the analysis of the high-frequency dynamic and noise performance and the static characteristics of n-type Schottky barrier (SB) MOSFETs on SOI substrate. A 2D Ensemble Monte Carlo (EMC) simulator including tunnelling transport at the Schottky interfaces has been used. Quantum transmission coefficients and treatment of image charge effects on the Schottky barrier have been...
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