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A simple and inexpensive method for growing Ga2O3 using GaAs wafers is demonstrated. Si-doped GaAs wafers are heated to 1050 °C in a horizontal tube furnace in both argon and air ambients in order to convert their surfaces to β-Ga2O3. The β-Ga2O3 films are characterized using scanning electron micrograph, energy-dispersive X-ray spectroscopy, and X-ray diffraction. They are also used to fabricate...
Flexible electronics utilizing single crystalline semiconductors typically require post-growth processes to assemble and incorporate the crystalline materials onto flexible substrates. Here we present a high-precision transfer-printing method for vertical arrays of single crystalline semiconductor materials with widely varying aspect ratios and densities enabling the assembly of arrays on flexible...
We have developed two approaches to processable precursors to conjugated polymers: main-chain and side-chain. Upon oxidative conversion to the conjugated polymer, a main-chain precursor yielded a nearly perfect spectral match, an identical λ max , and an equivalent band gap to that of electrodeposited chromophore, resulting in a color match. This precursor method has the potential to incorporate...
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