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New memristors-based neuronal spike event generator is introduced. By using the dynamic properties of conditional resistance switching of a practical bistable memristive device, the neuronal action potential is generated describing both the integrate-and-fire spiking events and the long enough refractory period of nerve membrane cells. The memristor offers the dual time-constants which model the unbalanced...
In this paper we present an electrical model of the inner hair cell based on an improved mathematical model. The model is implemented in silicon in the current domain using translinear circuits. It improves on previous models by taking into consideration the potassium and calcium ion flow into and out of the inner hair cell, yielding a more accurate real-time model of the auditory pathway.
This paper proposes a novel technique to exploit the high bandwidth offered by through silicon vias (TSVs). In the proposed approach, synchronous parallel 3D links are replaced by serialized links to save silicon area and increase yield. Detailed analysis conducted in 90 nm CMOS technology shows that the proposed 2-Gb/s/pin quasi-serial link requires approximately five times less area than its parallel...
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