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Use of field emission cathodes with high density of electronic current is capable to improve characteristics of electrovacuum devices and to give additional acceleration in development of vacuum microelectronics. For obtaining high density of current it is necessary to increase efficiency and concentration of emission centers. Improvement of field emission of characteristics at production on the flat...
The results of structuring silicon surface after vacuum-plasma treatment through discontinuous carbon film are shown. The geometric and concentration features of silicon juts are established. The range of radius of rounding is 0.5–5 mkm depending on type of surface and treatment. The range of concentration 6∗108–1.6∗109 cm2 depending on type of surface and treatment. As shown the freon plasma treatment...
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