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We have developed an analytical model of channel potential and threshold voltage of a gate‐engineered heterostructure transistor, triple material gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistor (HEMT). Two steps in channel potential profile lead to suppression of short channel effects. For accurate modeling of the device, spontaneous and piezoelectric...
We have designed a triple material tri-gate junctionless transistor (n-channel) which acts as a tunnel field effect transistor (TFET) by using the quantum tunneling phenomenon substituting thermionic emission. To turn the device ON, tunneling occurs by narrowing the barrier in between source to drain using middle gate voltage. This junctionless tunnel field effect transistor (JLTFET) operates similar...
The present work reports the effect of device doping profile and dimension scaling on electronic properties of a gate and channel engineered symmetric double gate MOSFET. Based on a two dimensional mathematical model incorporating Poisson's and basic drift-diffusion equations, the work demonstrates how the basic electronic parameters like surface potential, threshold voltage and drain to source current...
A two dimensional simulation study has been executed to explore the characteristics of a newly proposed AlGaN/GaN High Electron Mobility Transistor (HEMT) device with triple material gate (TMG) structure. Surface potential and electric field distribution along the device channel are comprehensively examined and compared with those of dual material gate (DMG) and single material gate (SMG) HEMT. TMG...
We determine the thermal conductivity of single layer graphene supported on silicon nitride layer followed by a silicon substrate using a three dimensional simulation study. Temperature distribution profile along the graphene flake is obtained and heat transmission in graphene layer along with the subsequent layers is investigated by modeling the laser light as heat source. Two types of heat sources...
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