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We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge generation and its impact on the device performance. Moderate Metal Gate / High-K dielectric (MG/HK) interface reaction is found to be a dominant factor to improve device performance. By optimizing TaCx composition, fixed charge free TaCx/HfSiON device is successfully fabricated. Also,...
Dominant scattering mechanisms for both electrons and holes in HfSiON MISFET were examined systematically by using the newly developed pulse measurement technique. Mobility determining factors for electrons and holes in various effective field (Eeff) regions were identified. In addition, the influence of two elements of Hf and N on the mobility in the operational Eeff region was investigated and guidelines...
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