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This paper presents the design, electromagnetic simulation strategies and experimental characterisation of a two‐stage stacked‐FET cell in a 100 nm GaN on Si technology around 18.8 GHz, suited for Ka band satellite downlink applications. A good agreement is found between the electromagnetic simulations and the measured performance on the manufactured prototype, thus demonstrating that a successful...
In this paper, the design and characterization of a GaN HEMT based class-AB power amplifier (PA) operating in LTE communication band (1.9–2.5 GHz) are presented. A model-based design procedure is adopted. Source and load impedances for optimum linearity, power and efficiency are extracted through source- and load-pull simulation. The implemented PA shows excellent performance on the whole frequency...
This paper presents the design and realization of a highly efficient broadband class-F power amplifier (PA) with a multi-harmonic controlled output network. Optimum performance in terms of bandwidth and efficiency is targeted over the frequency band 1.1–2.1 GHz. The design is developed in the Keysight Advanced Design System (ADS) environment and verified experimentally through small- and large-signal...
This work discusses the design of a 3-stacked GaAs HEMT test cell at 10 GHz. The series stacked topology, well known for CMOS amplifiers, can be profitably applied to GaAs microwave monolithic integrated circuits, overcoming the limits imposed by breakdown. The stacked structure here presented, currently under fabrication, has been developed following a characterization-oriented strategy, since it...
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