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This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor...
This paper reports simulation of punch-through gallium nitride (GaN) insulated gate bipolar transistors (IGBTs) with different drift layer thicknesses of t=12 μm and t=17 μm delivering breakdown voltages of VBD=600V and VBD=700V, respectively. The simulated devices are enhancement-mode with the threshold voltage of +3.5V. The leakage current in proposed devices are in the range of 10−9 A/μm. Using...
The effects of electric field induced traps generation in the drain access region is studied using industry standard TCAD, Atlas by Silvaco [1]. We show that the reduction in the cut-off frequency of the device from 13.9 (GHz) to 11.25 (GHz) could be linked to the electric field induced traps. We have used acceptor traps at an energy level of ET = Ev + 0.9 (eV), corresponding to substitutional carbon...
The effect of self-heating and polarisation is studied in AlGaN/GaN Transmission Line Measurement (TLM) structures with varying the contact spacing between the source and drain. The measurement results of the I-V characteristics are calibrated and investigated by TCAD Atlas-Silvaco. The self-heating simulations show a hotspot at the vicinity of the drain side. The electrical stress that is applied...
The effect of GaN cap and its thickness on device performance is investigated using simulations by Silvaco Atlas toolbox. The simulations are based on meticulous calibration of a conventional, lateral, GaN capped, 1μm gate-length HEMT with a source-to-gate and gate-to-drain spacings of 2μm, and 3μm, respectively. The breakdown voltage of the GaN HEMT is improved by the aid of p-doped GaN cap and field...
The current collapse and normally-on devices are the main roadblocks to the wider employment of the GaN technology. To explain the current collapse effect, surface and bulk trapping/de-trapping phenomena are modeled using 2D driftdiffusion and hydro-dynamic transport models bytransient simulations within Silvaco TCAD. The current collapse next to 75% and 5% was observed due to surface and bulk trapping,...
A 2D driftdiffusion model with Schrödinger-Poisson quantum corrections using ATLAS toolbox by Silvaco is calibrated against experimental ID-VGS characteristics of the 1 μm gate length GaN-based high electron mobility transistor (HEMT). The model takes into account both piezoelectric and spontaneous polarization effects at the all interfaces of GaN/Al0.25Ga0.75N/AlN/GaN structure. This unintentionally...
A 2D drift-diffusion (DD) and Hydrodynamic (HD) transport models within ATLAS simulation toolbox by Silvaco have been calibrated against experimental I–V characteristics of the 0.25µm gate length GaN High Electron Mobility Transistor (HEMT). The simulations take into account both piezoelectric and spontaneous polarization effects at the interface of AlGaN and GaN. The simulations have been employed...
Notice of Violation of IEEE Publication Principles"A New Scheme for on-Demand Group Mobility Clustering in Mobile Ad hoc Networks"by A. Dana, A.M.Yadegari, A. Salahi, S. Faramehr, H. Khosraviin the Proceedings of the 10th International Conference on Advanced Communication Technology, 2008. (ICACT `08), Vol 2, 2008, pp. 1370-1375 After careful and considered review of the content and authorship...
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