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This paper describes the design of a SiC pulse width modulation (PWM) signal generator in the HiTSiC® CMOS process from Raytheon Systems Limited. The high-temperature applications of the circuit include motor control in heavy equipment, deep earth drilling, dc-dc voltage converters and power inverters. The results presented in this paper are for the PWM circuit operating with an input clock frequency...
Wide bandgap semiconductors allow for the potential of expanded temperature ranges for power and mixed-signal applications. Developments in a Silicon Carbide (SiC) CMOS integrated circuit process have demonstrated high temperature operation at 400 °C and above, paving the way for a SiC-controlled SiC power electronics system capable of operating at high temperatures. A two-phase clock generator with...
This paper demonstrates the first reported high temperature voltage comparator in CMOS silicon carbide. The comparator was designed in a 1.2 μm CMOS SiC process and has been tested for a voltage supply of 12 V to 15 V. The rail to rail voltage comparator has been tested up to 450°C with rise and fall times of 31 ns and 22 ns respectively, and positive and negative propagation delays of 108 ns and...
This paper presents the first operational digital to analog converter at 400°C. The 8 bit R-2R ladder DAC was designed in the Raytheon 1.2 μm CMOS HiTSiC process. The data converter is also the first of its kind in SiC. It has been tested with a supply voltage between 12 V and 15 V, and reference voltages of 5 V to 8 V. At 400°C, the maximum measured differential non linearity (DNL) is 2 LSB (least...
Nitrous oxide inactivates vitamin B12 with detrimental consequences for folate and methionine metabolism, detectable by an increase in total plasma homocysteine. We hypothesised that a pre‐operative vitamin B12 and folate infusion prevents nitrous oxide‐induced homocysteine increase. Sixty‐three healthy patients having elective surgery were randomly allocated to receive either B‐vitamin plus nitrous...
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