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GaN lateral transistors (HEMTs) continue to penetrate the power electronics market demonstrating excellent performance in the medium power applications. However, for power applications 10kW and higher, vertical GaN devices are preferred over lateral one, since the former offers higher current and power densities. To date, several different vertical transistor structures have been proposed and reported,...
A normally OFF trench current aperture vertical electron transistor (CAVET) was designed and successfully fabricated with Mg-doped p-GaN current blocking layers. The buried Mg-doped GaN was activated using a postregrowth annealing process. The source-to-drain body diode showed an excellent p-n junction characteristics, blocking over 1 kV, sustaining a maximum blocking electric field of 3.8 MV/cm....
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