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In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricated in GaN technology is provided, highlighting their noise performance together with high-linearity and high-robustness capabilities. Several SELEX-ES GaN monolithic technologies are detailed, providing the results of the noise characterization and modeling on sample devices. An in-depth review of three...
This paper deals with the development of GaN-based solution for X Band T/R Module of future SAR generations. In Particular HPA and LNA MMIC solutions have been investigated and produced using a 0,25 µm GaN HEMT process provided by SELEX-SI featured by a 4W/mm power density. Obtained results demonstrate promising performance both in Output Power and Noise characteristics and open the wider perspectives...
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