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Device design for unitraveling-carrier photodiodes (UTC-PDs) and their derivative structures is reconsidered from the point of view of terahertz (THz) applications. A key design procedure for maximizing their bandwidth is optimization by incorporating hybrid absorbers. The effect of quasi-field in p-type absorber is carefully examined. It has been shown that the initial velocity transient must be...
Antenna-integrated diode photomixers packaged with silicon lenses were characterized. Continuous THz wave generation at frequencies up to 2.5 THz is demonstrated. A strong bias dependent output level, which is more remarkable at higher frequency, is observed resulting from the ballistic nature of electron transport.
This work investigated the field confinement behavior and junction size scaling for an inverted p-down avalanche photodiode, which requires no selective diffusion or ion-implantation and regrowth techniques. With this structure, the small spread of electric field of only 1 µm is obtained. The maximum 3-dB bandwidth of 23 GHz at the multiplication factor of 4.5 is obtained with the diameter of 20 µm,...
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