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We developed a fabrication technique of very thin silicon nanowall structures. The minimum width of the fabricated silicon nanowall structures was about 3 nm. This thinnest region of the silicon nanowall structures was investigated by using cathode luminescence and ultraviolet photoelectron spectroscopy (UPS). The UPS measurements revealed that the density of states (DOS) of the thinnest region showed...
We have developed very thin silicon nano-walls with a view to applying them to wide bandgap silicon solar cells. Employing nanoimprint lithography, anisotropic wet etching, and oxidation techniques, we formed a nano-wall array on silicon wafers. The width and height of the walls fabricated were several nm and about 1 μm, respectively. The pitch of the array was 150 nm. Photoluminescence and cathodoluminescence...
We developed a slimming process of Si nanowall aiming at the Si nanowall solar cell whose band gap is tuned by the quantum size effect. The width of Si nanowall was successfully reduced to 3 nm by using thermal oxidation. The density of states (DOS) in Si nanowall was measured by ultraviolet photoelectron spectroscopy. The 3-nm width Si nanowall showed DOS with stepwise shape which is completely different...
We perform nano-scale patterning on a sulfur (S) terminated GaAs (001) surface by a scanning tunneling microscope (STM) in ultra-high vacuum (UHV). A multi-layer of S deposited by using (NH 4 ) 2 S x solution is changed to a mono-layer after annealing at 560°C for 15h, which terminates the GaAs (001) surface. Groove structures with about 0.23nm in depth and about 5nm in width...
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