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In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption. Compared with conventional thermionic technologies, the improved electrical characteristics of TFET devices are expected to increase the power conversion efficiency of front-end charge pumps and rectifiers powered at sub-...
Compared to conventional technologies, the superior electrical characteristics of III–V Tunnel FET (TFET) devices can highly improve the process of energy harvesting conversion at ultra-low input voltage operation (sub-0.25V). In order to extend the input voltage/power range of operation in conventional charge pump topologies with TFET devices, it is of the major importance to reduce the band-to-band...
Local variations are increasingly important in new technologies. This paper presents the design of adaptive circuits based on the concept of Adaptive Body Bias Islands and a Forward and Reverse Body Bias Generator for FDSOI technology. The proposed Body Bias generator design, based on a DLL, allows a 70% area reduction compared to the DAC-based conventional design and reduces local variability by...
The superior electrical characteristics of the heterojunction III-V Tunnel FET (TFET) devices can outperform current technologies in the process of energy harvesting conversion at ultra-low power supply voltage operation (sub-0.25 V). In this work, it is shown by simulations that a cross-coupled switched-capacitor topology with GaSb-InAs TFET devices present better conversion performance compared...
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