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A simple matrix-method model is presented for calculating the impedance and the short-circuit frequency response of an avalanche photodiode (APD) with arbitrary layer structures and absorption/multiplication coefficients. In our matrix method model, the depletion region of the APD is divided into many thin layers. In each thin layer the absorption and the multiplication coefficients are assumed to...
An equivalent circuit model for a separate-absorption-charge-multiplication Ge/Si avalanche photodiode is presented. The current dependence of the resonance frequency scales with square root of current, as expected.
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