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Hydrogenated amorphous thin silicon films (a-Si:H) deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) on metal coated glass substrates were investigated to determine the effect of Aluminium Induced Crystallization (AIC) on their Electron Field Emission (FE) properties. Pre and post-surface characterization of the processed AIC-PECVD thin silicon films showed increased surface roughness...
We present experimental and theoretical work on excimer laser microstructuring of hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates, in the form of sharp and conical poly-Si spikes, for electron field emission applications.
A series of hydrogenated amorphous silicon films have been deposited using plasma enhanced chemical vapour deposition (PECVD) and hot-wire chemical vapour deposition (HWCVD) techniques. The total concentration of bonded hydrogen in the films was varied between 3% and 18% as determined by hydrogen effusion measurements. Fourier transform infra-red (FTIR) spectra of the PECVD and HWCVD samples exhibit...
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