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Stacked HfOx based vertical RRAM with interface engineering for 3D cross-point architecture is fabricated using a cost-effective fabrication process. The excellent performances such as low reset current, fast switching speed, high switching endurance and disturbance immunity, good retention and self-selectivity are demonstrated in the fabricated HfOx based vertical RRAM devices. The scaling limit...
An analytic model for the endurance degradation of metal oxide based RRAM is presented for the first time. The endurance degradation behaviors under various operation modes can be predicted by the model, which were verified by the measured data in different devices. Furthermore, the 106 endurance for all 4-level resistance states in HfOX-based RRAM is demonstrated by using the proposed optimization...
CMOS compatible Cu/SiO2/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments.
Excellent rectifying characteristics are demonstrated in the fab-friendly n-Si/HfO2/Ni/TiN devices with rectification ratio of >107 and the driving current of 1mA as a 1D-like selector. The rectified unipolar switching behaviors are demonstrated in the 1D1R cell structured with a diode-like device of n-Si/HfO2/Ni/TiN (1D) and a unipolar RRAM of n+-Si/HfOx/Ni/TiN (1R). Based on the measured I–V...
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