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The emerging 650 V large current rating, Enhancement-mode (E-mode) Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) is a promising device for low to medium power, high power density converters (e.g., motor drives, battery chargers), which require high robustness levels. Thus, a comprehensive study of the short circuit behavior of high power E-mode GaN HEMT is the subject of this paper...
Wide bandgap devices (WBGs) allow Power Factor Correction (PFC) circuits to operate at MHz frequency which leads to a better power density. Compared with kHz operation, MHz PFC in critical conduction mode (CrM) yields larger inductor valley current during the switch soft turn-on. Moreover, the input current distortion near grid voltage zero crossing has not been taken into account in the traditional...
Paralleling devices is an effective way to achieve higher power applications while still having the convenience brought by discrete devices. However, very few papers investigate the challenges of paralleling Gallium Nitride high electron mobility transistors (GaN HEMTs) in cascode configuration, especially the potential failure modes and its related mechanisms. In this paper, a comprehensive study...
A full-bridge current-source isolated dc/dc converter for Photovoltaic applications is proposed in this paper. The converter utilizes a Quasi-Switched-Capacitor circuit as the secondary side, which features a reduced number of switches and voltage stresses, and an additional boost function. Through the proposed control algorithm, soft-switching can be realized for all switches. A 1.2 kW, 1 MHz, 40...
This paper presents the small-signal modeling and controller design of an isolated Quasi-Switched-Capacitor (QSC) dc/dc converter. The converter serves as an auxiliary power supply in automotive applications, connecting the highvoltage battery and the 14 V power net. It employs a front-stage QSC dc/ac circuit with a 3:1 voltage step-down ratio, and a poststage synchronous-rectifier, current-doubler...
A 60GHz power amplifier (PA) is presented, using a 90-nm RF-CMOS process with 8 metal-layers. To the inductor provided by process, the Quality factor (Q value) is quite low and the model is inaccurate in millimeter-wave (MMW) design. Transmission lines (T-lines) can be modeled directly due to their inherent scalability in width and length, which is easy to realize accurate values of small reactance...
As a kind of mobile pulsed power supply (PPS), the magnetic flux compression generator (MFCG) can be used in many military fields, but the MFCG concept has not been explored systematically. The definitions of MFCG were given in two ways: the electric circuit model and the magnetic field model, and the latter was indispensable to resolve many technical difficulties. According to the field model, the...
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