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A new physics-based and computationally efficient drain current model for oxide semiconductor thin film transistors (TFTs) is developed. In this model, the influence of trap states in the band gap is taken into account to reproduce the gradual increase of the subthreshold current. Analytical expressions for the trapped electron densities are used to reduce the calculation time when solving the Poisson...
We discuss the influence of oxide semiconductor thickness on thin-film transistor (TFT) characteristics by measuring transfer characteristics of amorphous InGaZnO (IGZO) TFTs with various IGZO thicknesses and using a simple calculation of depletion width in a semiconductor film. The ON current was nearly constant with respect to IGZO thickness because its value depended on high-density electrons in...
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