The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
As in other semiconductor industries, there is a strong trend to use larger wafer diameters for the fabrication of power devices. However, for wafer diameters above 200 mm float-zone (FZ) silicon which is traditionally used for IGBTs is not available. Therefore, there is a need to use silicon material which has been fabricated by the magnetic Czochralski (Cz) method to make use of 300 mm wafers for...
The series of amorphous carbon films (a-C) deposited at a vacuum of 2 ×10 −3 Pa and nitrogenated amorphous carbon films (a-CN) deposited at different nitrogen pressures were grownby the pulsed laser deposition method. The influence of the molecular nitrogen pressure in the deposition chamber on the film properties was investigated. Electrical resistivity, intrinsic stress and UV-Vis transmission...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.