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Vertical-injection light-emitting diodes (VLEDs) were fabricated and demonstrated on mechanically rigid and flexible substrates using GaN-on-Si epilayers and a cost-effective Au-free Cu/Sn bonding method. With a mirror layer between the VLEDs and the receptor Si(100) carrier, $500~\mu \text{m} \,\, \times \,\, 500~\mu \text{m}$ VLEDs emit up to 134-mW optical power at a drive current of 300 mA....
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