The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents an innovative extraction technique for the modelling of transistor I/V characteristics. Starting from few continuous wave measurements carried out at 10 MHz by a vector load-pull measurement system, it is demonstrated how the extracted I/V model shows good predictions in harmonically tuned operations. As a case study, a 0.5-μm GaN HEMT with 1-mm of periphery is considered. The...
This contribution aims at the experimental confirmation of the advantages of the harmonic manipulation theory, using a low-frequency low-cost characterization setup. A 0.5-µm 10x100-µm (1-mm gate periphery) GaN HEMT has been characterized synthesizing at the current-generator plane different load conditions, realizing tuned-load and Class-F operation. The measurements clearly demonstrate the importance...
The manuscript presents a comparison between two nonlinear procedures oriented to the investigation of the intrinsic I/V dynamic characteristics at a transistor's current‐generator plane. These approaches, without the need of modeling device trapping and thermal effects, allow to obtain information at the current‐generator reference plane that is more strictly linked to the device performance in terms...
The manuscript presents a load-pull characterization technique for the design of power amplifiers in the millimeter-wave frequency band. The proposed approach is based on a recently proposed characterization technique which, by exploiting direct low-frequency nonlinear electron device measurements in conjunction with a model-based description of the device strictly dynamic nonlinearities, achieves...
The paper presents a low-cost technique for nonlinear characterization of active devices oriented to microwave power amplifier design. The approach is based on a recently proposed measurement technique which, by exploiting a direct low-frequency nonlinear electron device characterization in conjunction with a model-based description of the device strictly dynamic nonlinearities, achieves a similar...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.