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Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor $I$ –$V$ characteristics due to excessive device self-heating...
The energy-per-bit consumption of VCSEL-based optical interconnects has fallen steadily over the years. The basis for continuing this trend will be discussed by examining improvements in component technologies: VCSELs, photodiodes, and integrated circuits.
We present the bandwidth enhancement of an EAM monolithically integrated with two mutually injection-locked lasers. An improvement in the modulation efficiency and bandwidth are shown with mutual injection locking.
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