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This paper reports a method of measuring the on-chip thermal stress for silicon resonant accelerometer (SRA). This method could be used to evaluate the stress-temperature characteristic of SRA, and that would help to focus the problems exist in SRA. Clamp-clamp Double Ended Turning Fork resonator is used as a basic measurement unit. Analysis of the accuracy and noise in stress measurement is given...
In this paper we present the recent improvement of a silicon micro-mechanical vibrating beam accelerometer (SVBA) which combine the advantage of low cost of silicon MEMS fabrication technology, small size vacuum wafer level package, low noise low power application-specific integrated oscillation circuit and digital frequency demodulation technology. Under room temperature, it has achieved bias instability...
This paper demonstrates a silicon resonant accelerometer which consists of a MEMS structure and an ASIC readout circuit. The MEMS sensor is fabricated in an 80-µm thick SOI process with a wafer level vacuum package. For noise reduction, several techniques are employed during the circuit design. And in order to reduce the temperature drift due to self heating, the power consumption is carefully limited...
A micromechanical silicon resonant accelerometer (SRA) with micro leverage mechanism amplifying the inertial force is presented. SRA consists of a pair of double-ended tuning forks (DETF), a proof mass and a micro lever mechanism. Firstly, the relation between frequency shift and applied force of DETF is modeled with the classical Bernoulli-Euler beams theory and then simulated by the finite element...
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