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Single-die, silicon carbide (SiC) Insulated-Gate Bipolar Transistors (IGBTs) fabricated on wide epitaxial drift regions have been developed reaching avalanche breakdown voltages greater than 24 kV and rated currents up to 20 A. This work utilizes similar research-grade, SiC IGBT devices to investigate their continuous switching capabilities, by integrating them in a high voltage, non-isolated, step-down...
This paper presents preliminary results on the static and dynamic characterization of 12 kV and 20 kV N-channel silicon carbide Insulated-Gate Bipolar Transistors (IGBTs). These state-of-the-art devices were evaluated for their possible use in pulsed-power and energy conversion applications. The 12 kV IGBTs had a chip area of 0.7 cm2 and were rated for 10 A. Their active area was 0.32 cm2, with a...
This paper presents preliminary results on the static and dynamic characterization of 12 kV and 20 kV N-channel silicon carbide Insulated-Gate Bipolar Transistors (IGBTs). These state-of-the-art devices were evaluated for their possible use in pulsed-power and energy conversion applications. The 12 kV IGBTs had a chip area of 0.7 cm2 and were rated for 10 A. Their active area was 0.32 cm2, with a...
The need for power semiconductor devices capable of high-voltage, high-frequency, and high-temperature operation has been continuously growing, especially for energy conversion system and related power grid applications. However, current power converters built with silicon switches are quite bulky and inefficient, making their utilization difficult in practical energy conversion and power grid systems...
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