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Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as $4\times 10^{10}$ cm$^{-2}$ with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of $\sim 50$ less than that in the ON-state. We reveal a regime...
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