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In this paper, we present a highly robust GaN‐based X‐band low‐noise amplifier (LNA) showing promising small‐signal and noise performance as well as good linearity. The LNA is fabricated using in‐house 0.15 μm AlGaN/GaN on a SiC HEMT process. Owing to the optimum choice of HEMT topologies and simultaneous matching technique, LNA achieves a noise figure better than 2 dB, output power at 1 dB gain compression...
In this work, development of AlGaN/GaN high electron mobility transistor (HEMT) on SiC with 128 GHz maximum oscillation frequency (fmax) is reported. To achieve the desired frequency response with a robust, high yield and repeatable process, gate length (Lg) is fixed to 0.1μm and drain source spacing is set as 2μm and T-shaped gate structure is used. In order to overcome the short channel effect and...
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