The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50–75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled...
Indium Phosphide MMIC LNAs are enabling new capabilities in instrument development. The development of arrays of hundreds of cryogenically-cooled millimeter wave receivers has previously been challenging, but is now achievable with highly repeatable MMIC processes and advances in cryogenic on-wafer testing of LNAs. We have developed InP HEMT LNA MMICs for the 67–90 GHz frequency band that is the last...
The North America Array (NAA), also known as the next-generation Very Large Array (ngVLA), is a concept for a radio astronomical interferometric array operating in the frequency range 1.2 GHz to 116 GHz and designed to provide substantial improvements in sensitivity, angular resolution, and frequency coverage while reducing operational costs compared to the current Jansky Very Large Array (JVLA)....
In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (LNA) and mixer designs for U-Band, also known as the WR19 waveguide band (40–60 GHz). The LNAs were fabricated in NGC's 35 nm InP HEMT MMIC process. The MMICs were packaged in WR19 waveguide housings and tested for noise, both at room temperature and cryogenically. We present the results, including...
In this work, we describe new miniaturized low noise amplifier modules which we developed for incorporation in small-scale satellites or Cubesats, and which exhibit similar or better performance compared to previously reported LNAs in the literature. We have targeted the WR4 (170–260 GHz) and WR3 (220–325 GHz) waveguide bands for the module development. The modules include two different methods of...
We present an effort in developing W-band (75–110 GHz) gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) amplifiers for radar arrays. Due to GaN's high electric field breakdown capability and good 2D electron gas mobility in heterostructure field effect transistors, GaN power amplifiers provide best performance for high output power, high efficiency and small MMIC form factor amplifiers...
We present an approach for two-port on-wafer calibration to establish the test reference planes within the substrate of the device under test for the WR3 (220–325 GHz) and WR5 (140–220 GHz) frequency bands. On-wafer calibration is useful for characterizing elements such as transistors for modeling or for the confirmation of circuit models. There are numerous publications for on-wafer calibrations,...
We are building Argus, a 16-pixel square-packed focal plane array that will cover the 75–115.3 GHz frequency range on the Robert C. Byrd Green Bank Telescope (GBT). The primary research area for Argus is the study of star formation within our Galaxy and nearby galaxies. Argus will map key molecules that trace star formation, including carbon monoxide (CO) and hydrogen cyanide (HCN). An additional...
In this paper we present the design and measurement results, both on-wafer and in package, of an ultra-low-noise and wideband monolithic microwave integrated circuit (MMIC) amplifier in the frequency range of 75 to 116 GHz. The three-stage amplifier packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology achieves a record noise temperature of 23 K at 108 GHz when cryogenically...
We report S-parameter and noise measurements for three different InP 35 nm gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 GHz. When packaged in a WR-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 dB–3.6 dB over the 122–170 GHz band. One LNA was cooled to 20 K and a record low noise...
We present the design and performance of low noise amplifier modules in the WR3 frequency band (220–325 GHz). E-plane split waveguide blocks are used with 25 µm gallium arsenide membrane radial probes to couple signal into and out of 35 nm gate length indium phosphide monolithic millimeter-wave integrated circuit (MMIC) amplifiers. Design, fabrication and testing of the probe transitions and amplifier...
We currently achieve 3.4 dB noise figure at 183GHz and 2.1 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter...
In this paper, we describe the design, simulation, and on-wafer measurements of Submillimeter-wave Monolithic Integrated Circuit (S-MMIC) amplifiers having gain in the 400–500 GHz range. A single-stage amplifier and two three-stage amplifiers with similar topology are presented, and have been fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP high electron mobility transistor (HEMT) process...
We report on the development of W-band (75–110 GHz) heterodyne receiver technology for large-format astronomical arrays. The receiver system is designed to be both mass-producible, so that the designs could be scaled to thousands of receiver elements, and modular. Most of the receiver functionality is integrated into compact Monolithic Microwave Integrated Circuit (MMIC) amplifier-based multichip...
We report cryogenic noise temperature and gain measurements of a prototype heterodyne receiver module designed to operate in the atmospheric window centered on 150 GHz. The module utilizes MMIC InP HEMT amplifiers, a second harmonic mixer, and bandpass filters. Measurements show an average gain of 22 dB and an average noise temperature of 87 K over a 40 GHz band from 140 to 180 GHz when the module...
In this paper, a 0.27 mW fundamental oscillator module operating at 330 GHz is presented. The MMIC in the module contains both the oscillator circuit and waveguide probes integrated on the same InP substrate. The oscillator is implemented in coplanar waveguide (CPW) technology and uses advanced high fMAX 35 nm InP HEMT transistor in a common gate configuration. The integrated radial E-plane probe...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.