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The surface treatment of low-k dielectric layers by exposure to atomic oxygen is presented as an alternative to plasma based treatments prior to barrier layer formation. High carbon content porous low-k dielectric films were subjected to increasing exposures of atomic oxygen and x-ray photoelectron spectroscopy (XPS) studies reveal both the depletion of carbon and the addition of oxygen at the surface...
A copper-aluminium alloy (90:10wt%) has been investigated as a possible candidate for future interconnect applications. The tendency of the Al to segregate at the surface of the Cu following thermal anneal makes this alloy potentially suitable to function as a self-forming Cu diffusion barrier layer. X-ray photoelectron spectroscopy (XPS) and electrical characterisation measurements were used to study...
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