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This paper highlights the interest of FD-SOI with high-k and metal gate as a possible candidate for low power multimedia technology. The possibility of multi-VT by combining UTBOX with back plane, back biasing, variable TiN thickness and Al2O3 in the gate stack is demonstrated. The viability of these approaches is corroborated via mobility and reliability measurements. Dual gate oxide co-integrated...
The paper presents an overview of the Bias Temperature Instabilities (BTI) reliability in High-k/Metal gate technologies. We show that mobility performance and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. PBTI, more sensitive to bulk oxide traps, is strongly reduced in very thin dielectric films. Reducing the metal...
A systematic study of mobility performances and Bias Temperature Instability (BTI) reliability was done on a large variety of advanced dielectric stacks. We clearly demonstrate that mobility performances and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. Reducing the metal gate thickness favors the reduction of mobility...
A systematic study of mobility performances and BTI reliability was done in advanced dielectrics stacks. By reducing the oxide films thicknesses THKles2.5 nm, PBTI becomes generally very low and associated lifetimes are always over 10 years. By studying a large variety of dielectric stacks we also clearly demonstrate that mobility performances, interface defects Nit and NBTI reliability are strongly...
This paper compares, for the first time, the scalability of physical- and chemical-vapor-deposited (PVD and CVD) TiN on HfO2 as a gate stack for FDSOI cMOSFETs down to 25nm gate length and width. It is shown that not only the intrinsic material properties but also the device architecture strongly influences the final gate stack properties. Reliability issues, stress and gate control in the sub-35nm...
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