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For the first time we demonstrate the CMOS integration of undoped fully-depleted Ultra Thin Body and BOX devices (UTB2) with (110)/(100) substrate crystal orientation for pFET and nFET respectively. For this, we used an original 3D-folded Bulk+/Silicon-On-Nothing (SON) process on DSB substrate. Resulting multi-surface orientations devices are studied.
We report a new nanodot MOSFET, based on the use of Bulk wafer and Silicon-On-Nothing technology, requiring neither CMP nor extra photo-lithographic step. SRAM-application oriented nanodot devices were fabricated using this new process. Record performance among the nanometric gate-all-around MOSFET state-of-the-art is obtained thanks to a high quality transport.
In this paper we compare Fully-Depleted SOI (FDSOI) devices with different BOX thicknesses with or without ground plane (GP). With a simple High-k/Metal gate structure, the 32 nm devices exhibits Ion/Ioff performances well situated for low power (LP) applications. The different BOX thicknesses and ground plane conditions are compared with bulk shrunk technology in terms of variability and noise. 0...
This work highlights the new bulk+ technology using high-K dielectric, single metal gate and fully depleted SON (silicon on nothing) channel for sub-45 nm low cost applications. Thin silicon channel (down to Tsi= 8 nm) and thin BOX (Tbox = 15 to 25 nm) are obtained using the SON process (Jurczak, 1999). Transistor performance (Wdesign/Lgate= 90 nm/40 nm) at Vdd = 1.1 V and Ioff < 2 nA/ mum is as...
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