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We investigate a novel Ti Chemical Vapor Deposition (CVD Ti) technique for source/drain and trench contact silicidation. This work is a first demonstration of a highly selective, superconformal Ti process that exhibits a low p-type CVD Ti/SiGe:B contact resistivity (pc) down to 2.1×10−9 Ω.cm2 (a 40% reduction vs. PVD Ti), matching the lowest published values [1-5]. A competitive n-type CVD Ti/Si:P...
For the first time, we extensively review to which extent ion implantation is viable for the design of n-FET transistors with gate length down to 20nm in a FDSOI technology. Three implantation schemes are covered and their potential and limitations are presented in terms of technological challenges and electrical performance.
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