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This paper reports the fabrication, measurement and discussion about the nanosolenoid inductors for high frequency applications as much as 40 GHz, taking advantage of a much smaller size compared with traditional microinductors. Three small size nanosolenoid inductors are fabricated, such as a nanosolenoid inductor with a diameter of 4.8 um, pitch of 10 um, length of 22 um. The nanohelix inductors...
This paper shows a fabrication method to form one-dimensional (1D) and two-dimensional (2D) periodic nanostructures on suspended film with focused ion beam (FIB) irradiation. The suspended film is prepared by KOH back etch on the SOI (Silicon-on-insulator) wafer or Si wafer coated with metal or Si3N4 film. Then the FIB milling method is applied to pre-define the initial pattern on the suspended film...
This paper reports a novel method for nanofabrication utilizing the hybrid of energetic ion induced fluidization and stress. In the method, large-area irradiation of focused ion beam (FIB) on suspended film structures such as clamped-clamped cantilevers is adopted. The ion (such as Ga+) bombardment causes sputtering, fluidization and stress introducing to the target materials. These effects work together...
22nm node Si SOI Coplanar “N Channel Vertical Dual Carrier Field Effect Transistors” (VDCFET) and its SOC with effective channel length less than 10nm for communication applications are presented.
This paper reports for the first time a novel highly-ordered three-dimensional (3D) petal-like arrayed structure (PLAS) which can serve as an ideal substrate for surface-enhanced Raman scattering (SERS). The structure is achieved by anisotropically etching a hexagonal close-packed silica nanoparticle (SNP) bilayer coated on a silicon substrate through evaporation-induced self-assembly, and then depositing...
We report a novel stress-assistant selective etching (SASE) mechanism for nanofabrication, which is discovered that tensile stress can increase dry-etching rate. By introducing patterned stress, this mechanism can realize selective etching, and be used to achieve nanostructures independent of lithography. Based on the mechanism, we employ focused ion beam (FIB) to introduce stress while milling, and...
We report for the first time a facile lithography-free approach for fabricating nanopillars over large areas or in patterns. The key technique of this approach is that randomly-distributed nanoscale SiO2 patterns can be synthesized on substrates simply by removing photoresist with oxygen plasma bombardment. Those SiO2 nanopatterns may further function as masks in the following etching process for...
Micromachining of bulk piezoelectric substrates for fabrication of high frequency, broadband piezoelectric composite transducers is reported in this paper. A deep reactive ion etching process was developed for bulk PMN-PT single crystal etching with an aspect ratio of >8. A piezoelectric composite with a resonance of 75 MHz was fabricated and the electromechanical coupling coefficient was measured...
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