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A development of the VeSTIC technology is reported. The manufacturing of the test structures with different types of transistors is described. The electrical 1-V characteristics of the MOS and junction field effect transistors and of the bipolar junction transistors produced in VeSTIC technology were measured. Basic parameters of the test devices were extracted using the simple device compact models...
This paper summarizes work performed in ITE on development of ionizing radiation detectors integrated on-chip with readout electronics. First, the construction of such detectors will be presented in brief, together with the main features of non-typical silicon process deployed, then the test structures sent for prototyping will be discussed in detail.
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