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We demonstrate fabrication a silicon on diamond structure at around room temperature using a plasma-activated bonding (PAB) method. Thin and flat silicon-dioxide (SiO2) film was used as an activation layer for PAB. The SiO2 film was prepared by a chemical vapor deposition and then a chemical mechanical polishing (CMP). The surface roughness after the CMP were average ∼1 nm rms at 300 nm thick. Thinning...