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While RF transistor amplifiers—such as the field effect transistor (FET) amplifier which leverages its transconductance for amplification—are the key enablers of signal amplification in today's wireless communication; their ability to provide amplification degrades with increasing frequencies, thereby requiring multiple amplification stages which makes the device noisy, expensive and bigger in size...
While RF transistor amplifiers—such as the field effect transistor (FET) amplifier which leverages its transconductance for amplification—are the key enablers of signal amplification in today's wireless communication; their ability to provide amplification degrades with increasing frequencies, thereby requiring multiple amplification stages which makes the device noisy, expensive and bigger in size...
We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consists of three GFETs, which includes a two GFET inverter connected in a feedback loop with the main GFET in which the NDR is realized. Herein, a GNDR...
This paper reports the successful experimental demonstration of the localized growth of horizontal, dense carbon nanotube (CNT) arrays in situ and at the wafer scale. The selectivity and directionality of the CNT catalytic growth process along with the adequate design and fabrication of the catalyst support enables the direct integration of nanotubes arrays into heterogeneous devices. This novel CNT...
We report on a highly efficient growth of graphene using dehydrogenation of acetylene by an oxidative reaction with carbon dioxide. In few seconds, large-area of copper foil used as catalyst of the reaction is fully covered with graphene. The yield of the reaction can be as high as 0.1%. This method allows the growth of multilayered graphene with misoriented layer stacking. This could be the result...
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