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Two types of air spacer technologies are proposed and TCAD simulation is used to construct 20 nm-gate transistor. One is non-SAC (Self Aligned Contact) process with air spacer. It is compared with nitride-spacer and oxide-spacer transistors representing the two extremes of conventional spacer technologies. With 10 nm air spacers, the CMOS inverter delay is reduced by 45% and 30% compared to the nitride-spacer...
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